发明名称 |
Semiconductor device and manufacturing method thereof |
摘要 |
There are provided a structure of a semiconductor device in which low power consumption is realized even in a case where a size of a display region is increased to be a large size screen and a manufacturing method thereof. A gate electrode in a pixel portion is formed as a three layered structure of a material film containing mainly W, a material film containing mainly Al, and a material film containing mainly Ti to reduce a wiring resistance. A wiring is etched using an IPC etching apparatus. The gate electrode has a taper shape and the width of a region which becomes the taper shape is set to be 1 mum or more.
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申请公布号 |
US2004164296(A1) |
申请公布日期 |
2004.08.26 |
申请号 |
US20030718584 |
申请日期 |
2003.11.24 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD., A JAPAN CORPORATION |
发明人 |
YAMAZAKI SHUNPEI;SUZAWA HIDEOMI;KUSUYAMA YOSHIHIRO;ONO KOJI;KOYAMA JUN |
分类号 |
H01L29/786;G02F1/1362;H01L21/77;H01L21/84;H01L27/12;(IPC1-7):H01L29/04;H01L21/00 |
主分类号 |
H01L29/786 |
代理机构 |
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地址 |
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