发明名称 MANUFACTURING METHOD OF PHOTOVOLTAIC ELEMENT
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a photovoltaic element with excellent characteristics and a high yield by surely selectively removing a shunt part without increasing shunt path when removing the shunt part present within the photovoltaic element through electrolytic processing. <P>SOLUTION: The manufacturing method of a photovoltaic element has a process in which the photovoltaic element sequentially laminating a back face reflecting layer, a semiconductor layer, and a transparent electrode layer in this order is immersed into an electrolytic solution, forward voltage is applied to the element, and short-circuit current due to defects of the element is selectively eliminated by means of electrolytic process for reducing the transparent electrode layer in the short-circuiting defects. By controlling voltage gradient▵V/▵t to the range of -15 to -0.1V/s at the case of dropping the forward voltage applied to the photovoltaic element to such extent as 0V level, or to such extent that the reduction reaction never occurs in the transparent electrode layer, the shunt part is surely selectively removed. <P>COPYRIGHT: (C)2004,JPO&NCIPI</p>
申请公布号 JP2004241618(A) 申请公布日期 2004.08.26
申请号 JP20030029444 申请日期 2003.02.06
申请人 CANON INC 发明人 SHIMODA HIROTSUGU
分类号 H01L31/04;H01L21/00;H01L31/18;(IPC1-7):H01L31/04 主分类号 H01L31/04
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