| 摘要 |
A method for producing an ultraviolet light (UV) transmissive silicon nitride layer in a plasma enhanced chemical vapor deposition (PECVD) reactor is presented. The UV transmissive film is produced by reducing, in comparison to a standard silicon nitride process, a flow rate of the silane and ammonia gas precursors to the PECVD reactor, and significantly increasing a flow rate of nitrogen gas to the reactor. The process reduces the concentration of Si-H bonds in the silicon nitride film to provide UV transmissivity. Further, the amount of nitrogen in the film is greater than in a standard PECVD silicon nitride film, and as a percentage constitutes a greater part of the film than silicon. The film has excellent step coverage and a low number of pinhole defects. The film may be used as a passivation layer in a UV erasable memory integrated circuit.
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