发明名称 |
Apparatus and method for thin-layer metrology |
摘要 |
An apparatus (1) and a method for thin-layer metrology of semiconductor substrates (16) are disclosed. The semiconductor substrates (16) are delivered or transported to the apparatus (1) by means of at least one cassette element. A measurement unit (5) for thin-layer micrometrology is provided in the apparatus (1), the semiconductor substrates being conveyed by means of a transport mechanism (7) from the cassette element (3) to the measurement unit (5) for thin-layer micrometrology. A measurement unit (9) for thin-layer macrometrology is provided in the region of the transport mechanism (7) after the cassette element (3). By means of the measurement unit (9) for thin-layer macrometrology, measurement locations (22) on the semiconductor substrate that require more detailed examination in the measurement unit (5) for thin-layer micrometrology can rapidly be identified.
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申请公布号 |
US2004164725(A1) |
申请公布日期 |
2004.08.26 |
申请号 |
US20040777162 |
申请日期 |
2004.02.13 |
申请人 |
LEICA MICROSYSTEMS JENA GMBH |
发明人 |
SLODOWSKI MATTHIAS |
分类号 |
G01N21/956;H01L21/00;H01L21/66;(IPC1-7):G01R1/00 |
主分类号 |
G01N21/956 |
代理机构 |
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代理人 |
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地址 |
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