发明名称 |
Method of activating polysilicon gate structure dopants after offset spacer deposition |
摘要 |
A process sequence used to integrate an anneal cycle, used to activate ion implanted dopants in a polysilicon gate structure, and the definition of offset silicon oxide spacers on the sides of the polysilicon gate structure, has been developed. The process sequence features ion implantation of dopants into a blanket polysilicon layer located overlying a metal oxide semiconductor field effect transistor (MOSFET), gate insulator layer. After definition of the polysilicon gate structure a silicon oxide layer is deposited, followed by an anneal procedure allowing activation of the implanted dopants in the polysilicon gate structure to occur. Out diffusion of implanted dopants during the activation anneal procedure is minimized as a result of the overlying silicon oxide layer. An anisotropic dry etching procedure is then performed on the silicon oxide layer resulting in the definition of offset silicon oxide spacers on the sides of the polysilicon gate structure.
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申请公布号 |
US2004164320(A1) |
申请公布日期 |
2004.08.26 |
申请号 |
US20030361877 |
申请日期 |
2003.02.10 |
申请人 |
CHARTERED SEMICONDUCTOR MANUFACTURING LTD. |
发明人 |
QUEK ELGIN;BENISTANT FRANCIS |
分类号 |
H01L21/336;H01L21/8238;H01L29/78;H01L31/0328;(IPC1-7):H01L31/032 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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