发明名称 Solid state imaging device, semiconductor wafer, optical device module, method of solid state imaging device fabrication, and method of optical device module fabrication
摘要 With the reduced size of a solid state imaging device, the invention provides: a solid state imaging device of a chip size and having good environmental durability; a semiconductor wafer used for fabricating a solid state imaging device; an optical device module incorporating a solid state imaging device; a method of solid state imaging device fabrication; and a method of optical device module fabrication. The solid state imaging device comprises: a solid state image pickup device formed on a semiconductor substrate; a light-transparent cover arranged opposite to an effective pixel region, so as to protect (the surface of) the effective pixel region formed in one surface of the solid state image pickup device against external environment; and an adhering section formed outside the effective pixel region in the one surface of the solid state image pickup device, so as to adhere the light-transparent cover and the solid state image pickup device.
申请公布号 US2004164981(A1) 申请公布日期 2004.08.26
申请号 US20040773809 申请日期 2004.02.05
申请人 FUJITA KAZUYA;TSUKAMOTO HIROAKI;YASUDOME TAKASHI 发明人 FUJITA KAZUYA;TSUKAMOTO HIROAKI;YASUDOME TAKASHI
分类号 H01L27/14;H01L23/00;H01L27/146;H01L31/0203;H01L31/10;H04N5/225;H04N5/335;(IPC1-7):G06T1/00;G06F17/00 主分类号 H01L27/14
代理机构 代理人
主权项
地址