Structure and device including a tunneling piezoelectric switch and method of forming same

摘要

Tunneling piezoelectric switch structures including high quality epitaxial layers of monocrystalline materials (26) grown overlying monocrystalline substrates (22) such as large silicon wafers are disclosed. The structures includes an accommodating buffer layer (24) spaced apart from a silicon wafer by an amorphous interface layer (28) of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer.