| 摘要 |
A method of forming a sensor for detecting motion is disclosed. The method includes a first step (110) of providing a silicon-on-insulator (SOI) substrate (200) containing a device layer (210), an insulator layer (220), and a handle layer (230). The device layer may be patterned to form a device structure (310). A support substrate (410) is also provided and patterned, and an electrically conductive layer (510) is formed over the support substrate. The SOI substrate and the support substrate are bonded together, and the handle layer and the insulator layer are removed from the SOI substrate, thus releasing the device structure. |
