| 摘要 |
The invention relates to a spin detection magnetic memory disposed on a semiconductor junction (103) formed by 2 adjacent zones, the first (101) and the second (102) zones having a conductivity which is respectively a first and second type; said memory comprises a first (110) and a second (120) connection cell disposed on the sides of said junction (103), each cell being provided with a magnetization module (111-112, 121-122). At least one of said cells comprises a polarization electrode (113, 123) on top of the magnetization module. |
