发明名称 Non-volatile semiconductor memory with programmable latches
摘要 A non-volatile semiconductor memory includes a memory cell array having a plurality of electrically-rewritable non-volatile memory cells. The memory cell array is provided with an initially-setting data area, programmed in which is initially-setting data for deciding memory operation requirements. The non-volatile semiconductor memory also includes an initial-set data latch. The initially-setting data of the memory cell array is read out and transferred to the data latch in an initially-setting operation. <IMAGE>
申请公布号 EP1107121(A3) 申请公布日期 2004.08.25
申请号 EP20000126542 申请日期 2000.12.11
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 HOSONO, KOJI;HIMENO, TOSHIHIKO
分类号 G11C7/20;G11C16/20;G11C29/00 主分类号 G11C7/20
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