发明名称 |
Non-volatile semiconductor memory with programmable latches |
摘要 |
A non-volatile semiconductor memory includes a memory cell array having a plurality of electrically-rewritable non-volatile memory cells. The memory cell array is provided with an initially-setting data area, programmed in which is initially-setting data for deciding memory operation requirements. The non-volatile semiconductor memory also includes an initial-set data latch. The initially-setting data of the memory cell array is read out and transferred to the data latch in an initially-setting operation. <IMAGE> |
申请公布号 |
EP1107121(A3) |
申请公布日期 |
2004.08.25 |
申请号 |
EP20000126542 |
申请日期 |
2000.12.11 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
HOSONO, KOJI;HIMENO, TOSHIHIKO |
分类号 |
G11C7/20;G11C16/20;G11C29/00 |
主分类号 |
G11C7/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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