| 摘要 |
PROBLEM TO BE SOLVED: To form a transparent conductive film at a low temp. and to enable a reinforced glass to be directly used for a substrate, by forming a crystalline transparent conductive film by the chemical vapor deposition on C based material-made C layer regions provided on a substrate. SOLUTION: C based material-made C layer regions 11 are dispersedly provided on a glass substrate 1, and a tin oxide-made transparent conductive film 2 having a rough surface is formed on the reinforcing glass 1 by atmospheric pressure thermal chemical vapor deposition method(CVD). A p-type amorphous Si(a-Si) layer 3, i-type a-Si layer 4 and n-type a-Si or microcrystalline Si layer 5 to be an optical active layer are formed on the transparent conductive film 2 by a vapor phase deposition method such as plasma CVD or photo CVD method, and an Ag back electrode 7 is provided through an ITO film 6 to be a diffusion blocking layer on the n-type a-Si layer 5 to form a thin film photosensor element. |
