发明名称 SEMICONDUCTOR-ON-INSULATOR DEVICE AND METHOD OF ITS MANUFACTURE
摘要 A method and apparatus for producing a relatively thin, relatively uniform semiconductor layer which has improved carrier mobility. In an embodiment, a lattice-matched insulator layer is formed on a semiconductor substrate, and a lattice-matched semiconductor layer is formed on the insulator layer to form a relatively thin, relatively uniform semiconductor on insulator apparatus. In embodiments of the method and apparatus, energy band characteristics may be used to facilitate the extraction of the well-region minority carriers.
申请公布号 EP1449242(A2) 申请公布日期 2004.08.25
申请号 EP20030787307 申请日期 2003.07.31
申请人 INTEL CORPORATION 发明人 JIN, BEEN-YIH;ARGHAVANI, REZA;CHAU, ROBERT
分类号 H01L21/762;H01L21/02;H01L21/20 主分类号 H01L21/762
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