发明名称
摘要 PURPOSE: A method for forming a silver thin film as a semiconductor metal line is provided to be capable of improving the uniformity and the adhesive force of the silver thin film by processing a heat treatment after forming a metal seed layer using electroless plating process. CONSTITUTION: A semiconductor substrate(110) is prepared for processing the following processes. After cleaning the semiconductor substrate, the surface of the semiconductor substrate is activated. A metal seed layer(130) is formed on the resultant structure by using an electroless plating solution. A heat treatment is carried out at the resultant structure. A silver thin film(140) is formed on the metal seed layer by carrying out an electrolytic plating process using a silver electrolytic plating solution.
申请公布号 KR100445839(B1) 申请公布日期 2004.08.25
申请号 KR20010086641 申请日期 2001.12.28
申请人 发明人
分类号 H01L21/28 主分类号 H01L21/28
代理机构 代理人
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