发明名称 |
METHOD FOR FORMING AN OXYNITRIDE SPACER FOR A METAL GATE ELECTRODE USING A PECVD PROCESS WITH A SILICON-STARVING ATMOSPHERE |
摘要 |
A semiconductor device including a semiconductor substrate; a metal gate electrode; and a silicon oxynitride spacer formed on a surface of the metal gate electrode, wherein an interface of the silicon oxynitride spacer and the metal gate electrode is substantially free of metal silicide. In one embodiment, the silicon oxynitride spacer includes a first portion and a second portion, in which the first portion is formed under starving silicon conditions. |
申请公布号 |
EP1449243(A1) |
申请公布日期 |
2004.08.25 |
申请号 |
EP20020784088 |
申请日期 |
2002.10.11 |
申请人 |
ADVANCED MICRO DEVICES INC. |
发明人 |
NGO, MINH, VAN;HALLIYAL, ARVIND |
分类号 |
H01L21/28;C23C16/30;H01L21/283;H01L21/31;H01L21/314;H01L21/318;H01L21/469;H01L21/768;H01L23/522;H01L29/423;H01L29/49;H01L29/76;H01L29/78;H01L29/786;(IPC1-7):H01L21/318 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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