| 摘要 |
PURPOSE: A semiconductor laser diode array and its fabrication method are provided to improve production time and fabrication cost and production yield of the semiconductor laser diode array. CONSTITUTION: An n-clad layer(21), an active layer(22), the first p-clad layer and an etch stop layer(24) are formed on an n-GaAs substrate(20) in sequence. The second p-clad layer and a p-cap layer and a ridge mask layer are deposited on the etch stop layer, and the p-cap layer and the second p-clad layer are made to form a ridge by patterning a deposited ridge mask layer. The first current block layer(28) and the second current block layer(29) are formed in sequence. A photo resist open aperture is formed on a channel and trench formation region by patterning a photo resist along the second current block layer. A ridge mask layer is revealed by removing a part of the second current block layer by injecting an etchant solution through the photo resist open aperture, and a part of the n-clad layer is etched and revealed vertically from the second current block layer. The p-cap layer is revealed by removing the revealed ridge mask layer, and a part of the GaAs substrate is revealed by removing a part of the revealed n-clad layer. A p-pad electrode(31) is formed along an upper plane of the revealed device by removing the remaining photo resist, and an n-pad electrode(32) is formed on a bottom of the n-GaAs substrate.
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