| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to prevent damage of a storage node region and misalignment by performing cell channel implant at a lower of a gate electrode using dual damascene processing. CONSTITUTION: A semiconductor substrate(100) defined by an active region(1000) and an isolation region(2000) is prepared. An oxide pattern is formed to expose the first gate region on the active region and the second gate region to partially overlap the isolation region. BF2 ions are implanted into first and second gate regions using the oxide pattern as a mask. Then, the first gate and the second gate are formed on the first gate region and the second gate region, respectively. The first oxide spacer(190) and the second oxide spacer(200) are formed at both sidewalls of the first gate and the second gate, respectively. Then, a source/drain region(210) is formed in the substrate.
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