| 摘要 |
PURPOSE: A method for manufacturing an isolation layer of a semiconductor device is provided to prevent over-etching of a substrate and moat by etching a pad nitride layer using two-step etching. CONSTITUTION: A pad oxide layer(110) and a pad nitride layer are sequentially formed on a substrate(100). The pad nitride layer is firstly etched by anisotropic etching and secondly etched by isotropic etching using a photoresist pattern as a mask. The photoresist pattern is removed. A trench is then formed by etching the exposed pad oxide layer and the substrate. An isolation layer(170) is then formed by filling a gap-fill oxide layer and planarizing to expose the pad oxide layer.
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