发明名称 |
CLEANING SOLUTION AND CLEANING METHOD USING THE SAME TO PERFORM MINIMAL MACHINING ON SEMICONDUCTOR SUBSTRATE WITHOUT CORRODING INTERCONNECTION MATERIAL |
摘要 |
PURPOSE: A cleaning solution is provided to perform a minimal machining on a semiconductor substrate without corroding an interconnection material by easily eliminating etching residue on the semiconductor substrate within a short interval of time. CONSTITUTION: A cleaning solution for the semiconductor substrate contains an oxide agent, an acid and fluorine compound. Basic compound is added to water so that the pH(hydrogen ion concentration) of the wafer becomes 3-10, and the density of the water is not lower than 80 weight percent. The weight ratio of an acid to an oxide agent in the cleaning solution is 0.1-1000.
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申请公布号 |
KR20040074611(A) |
申请公布日期 |
2004.08.25 |
申请号 |
KR20040010288 |
申请日期 |
2004.02.17 |
申请人 |
MITSUBISHI GAS CHEMICAL COMPANY INC. |
发明人 |
MATSUNAGA HIROSHI;OHTO MASARU;YAMADA KENJI;SHIMIZU HIDEKI;TSUGANE KEN;OGUNI SEIKI;KIMURA YOSHIYA |
分类号 |
H01L21/304;C11D3/00;C11D3/02;C11D3/20;C11D3/30;C11D3/37;C11D3/39;C11D7/08;C11D7/10;C11D7/26;C11D7/32;C11D11/00;(IPC1-7):H01L21/304 |
主分类号 |
H01L21/304 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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