WIRE USING DAMASCENE PROCESS, METHOD FOR FORMING THE SAME, SEMICONDUCTOR DEVICE INCLUDING THE SAME, AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A wire using damascene process, a method for forming the same, a semiconductor device including the same, and a method for fabricating a semiconductor device are provided to fabricate stably a contact plug by forming a conductive wire such as a bit line. CONSTITUTION: The first insulating layer pattern is formed on a surface of a semiconductor substrate(200) and includes the first pad and the second pad. The second insulating layer pattern is formed on the surface of the first insulating layer pattern and includes a groove or a plurality of trenches. The first conductive patterns are formed within the groove or the trenches. The first conductive patterns are electrically connected to the first pad. The first and the second insulating layer patterns include one oxide selected from a group including silicon oxide, HDP oxide, high-temperature oxide, middle-temperature oxide, and TEOS.