发明名称 Method for integrating passives on-die utilizing under bump metal and related structure
摘要 A passive component is realized on-die by fabricating a first conductor from either a layer of interconnect metal comprising copper or aluminum and being between approximately 1.0 micron and approximately 2.0 microns thick, or from a layer of under bump metal comprising either copper or aluminum and being between approximately 2.0 microns to approximately 5.0 microns thick. Following, a first isolation layer is formed over the first conductor. A second conductor having at least one external pad and comprising under bump metal is next fabricated over the first isolation layer. The second conductor can be fabricated substantially directly above the first conductor, for example. Thereafter, a second isolation layer having a hole over the external pad of the second conductor is formed over the second conductor. Subsequently, a bump attach site is fabricated at the hole in the second isolation layer over the external pad of the second conductor.
申请公布号 US6781229(B1) 申请公布日期 2004.08.24
申请号 US20010025438 申请日期 2001.12.19
申请人 SKYWORKS SOLUTIONS, INC. 发明人 FAZELPOUR SIAMAK
分类号 H01L21/02;H01L23/485;H01L23/522;(IPC1-7):H01L23/12;H01L23/48;H01L21/476 主分类号 H01L21/02
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