Method of forming a floating gate in a flash memory device

摘要

Disclosed is a method of forming a floating gate in a date flash memory device on which first and second polysilicon films are stacked. After the first polysilicon film is formed, a SiH4 gas is introduced to decompose SiH4 and SiO2 into Si and H2 and Si and O2. A N2 anneal process is then implemented so that the decomposed H2 gas and O2 gas react to a N2 gas and are then outgassed. Next, a SiH4 gas and a PH3 gas are introduced to form the second polysilicon film. A native oxide film within the interface of the first polysilicon film and the second polysilicon film is removed to improve characteristics of the data flash memory device.