| 发明名称 |
Nonvolatile semiconductor memory with a page mode |
| 摘要 |
A first address subset is allocated as a first column address in a nonvolatile semiconductor memory. In addition, a second address subset higher in order than the first address subset is allocated as a first row address. Furthermore, a third address subset higher in order than the second address subset is allocated as a second column address.
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| 申请公布号 |
US6781879(B2) |
申请公布日期 |
2004.08.24 |
| 申请号 |
US20020235170 |
申请日期 |
2002.09.05 |
| 申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
TANZAWA TORU;ATSUMI SHIGERU |
| 分类号 |
G11C16/00;G11C7/00;G11C8/12;G11C11/00;G11C11/34;G11C16/08;G11C16/28;G11C16/34;G11C29/00;H01L27/10;H01L27/115;H01L31/0328;(IPC1-7):G11C7/00 |
主分类号 |
G11C16/00 |
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