| 发明名称 |
Hetero-junction bipolar transistor with gold out-diffusion barrier made from InP or InGaP |
| 摘要 |
A hetero-junction bipolar transistor includes a collector layer, a base layer and an emitter layer, an emitter electrode containing Au being provided for the emitter layer, and an Au-diffusion barrier layer of InP or InGaP interposed between the emitter electrode and the base layer.
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| 申请公布号 |
US6781165(B2) |
申请公布日期 |
2004.08.24 |
| 申请号 |
US20030347694 |
申请日期 |
2003.01.22 |
| 申请人 |
FUJITSU QUANTUM DEVICES LIMITED |
发明人 |
OGURI HIROYUKI |
| 分类号 |
H01L21/28;H01L21/331;H01L29/08;H01L29/417;H01L29/737;H01L31/032;H01L31/0328;H01L31/0336;H01L31/06;H01L31/072;(IPC1-7):H01L31/032;H01L31/033 |
主分类号 |
H01L21/28 |
| 代理机构 |
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代理人 |
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