Low-voltage semiconductor memory device

摘要

This invention provides a semiconductor memory device operating at a low operating voltage (e.g., 1.8 V) and the semiconductor memory device includes a discharge circuit for discharging a voltage of a bit line prior to read/write operations. The discharge circuit includes high-voltage and low-voltage transistors coupled in series between the bit line and a reference voltage. The high-voltage transistor is switched on and off by a high voltage and the low-voltage transistor is switched on and off by a discharge signal.