发明名称 Anti-fuse structure and method of writing and reading in integrated circuits
摘要 An information write-register embedded in an integrated circuit (IC) is made of a plurality of independently addressable gate-controlled components formed in an isolated p-well nested in a n-well. Gates over the p-well are positioned on an insulator geometrically formed so that it is susceptible locally to electrical conductivity upon applying an overstress voltage pulse, whereby binary information can be permanently encoded into the write-register. The overstress voltage pulse is applied between the gate and the p-well and is created when a write-enable pulse of predetermined polarity and duration is superposed by a p-well pulse of opposite polarity and shorter duration.
申请公布号 US6781887(B2) 申请公布日期 2004.08.24
申请号 US20030455579 申请日期 2003.06.05
申请人 TEXAS INSTRUMENTS INCORPORATED 发明人 GELSOMINI TITO;SAN KEMAL TAMER
分类号 H01L23/525;(IPC1-7):G11C16/04 主分类号 H01L23/525
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