发明名称 Semiconductor light emitting device and method for manufacturing the same
摘要 A semiconductor light emitting device and a method for manufacturing the same are disclosed. The semiconductor comprises a light scattering-deflecting layer located on a semiconductor layer having a scraggly surface. Light is deflected due to the difference of refractive index when the light enters the semiconductor layer from the light scattering-deflecting layer, and the light scatters when the light enters the scraggly surface of the semiconductor layer, thereby enabling the semiconductor light emitting device to emit more light so as to increase the light emitting efficiency of the semiconductor light emitting device.
申请公布号 US6781160(B1) 申请公布日期 2004.08.24
申请号 US20030603378 申请日期 2003.06.24
申请人 UNITED EPITAXY COMPANY, LTD. 发明人 TSAI TZONG-LIANG;CHANG CHIH-SUNG;CHEN TZER-PERNG
分类号 H01L33/22;(IPC1-7):H01L29/22;H01L29/24 主分类号 H01L33/22
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