发明名称 |
Nitride offset spacer to minimize silicon recess by using poly reoxidation layer as etch stop layer |
摘要 |
A method of forming a semiconductor device provides a gate electrode on a substrate and forms a polysilicon reoxidation layer over the substrate and the gate electrode. A nitride layer is deposited over the polysilicon reoxidation layer and anisotropically etched The etching stops on the polysilicon reoxidation layer, with nitride offset spacers being formed on the gate electrode. The use of the polysilicon reoxidation layer as an etch stop layer prevents the gouging of the silicon substrate underneath the nitride layer, while allowing the offset spacers to be formed.
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申请公布号 |
US6780776(B1) |
申请公布日期 |
2004.08.24 |
申请号 |
US20010023328 |
申请日期 |
2001.12.20 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
QI WEN-JIE;PELLERIN JOHN G.;EN WILLIAM G.;MICHAEL MARK W.;CHAN DARIN A. |
分类号 |
H01L29/423;H01L21/28;H01L21/3065;H01L21/311;H01L21/318;H01L21/336;H01L29/49;H01L29/78;(IPC1-7):H01L21/302 |
主分类号 |
H01L29/423 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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