| 摘要 |
A trench-type lateral power MOSFET is manufactured by forming an n<->-type diffusion region, which will be a drift region, on a p<->-type substrate; selectively removing a part of substrate and a part of n<->-type diffusion region to form trenches; forming a gate oxide film of 0.05 mum in thickness in each trench; forming a polycrystalline silicon gate layer on gate oxide film; forming a p<->-type base region and an n<+>-type diffusion region, which will be a source region, in the bottom of each trench; and forming an n<+>-type diffusion region, which will be a drain region, in the surface portion of n<30 >-type diffusion region. The MOSFET has reduced device pitch, a reduced on-resistance per unit area and a simplified manufacturing process.
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