| 摘要 |
A magnetic memory includes first and second magnetoresistance effect elements (C1, C2) stacked on and under a first wiring (BL); and second and third wirings (DL1, DL2) extending perpendicularly to the first wiring (BL), such that one of two values of two-valued information is recorded by supplying a current to the first wiring while supplying a current to the second and third wirings respectively, and thereby simultaneously reverting magnetization in recording layers of the first and second magnetoresistance effect elements to predetermined directions respectively; and a difference between output signals obtained from the first and second magnetoresistance effect elements by supplying a sense current thereto via the first wiring is detected and read out as one of two values of the two-valued information. |
