发明名称 |
Vertically-stacked, field-programmable, nonvolatile memory and method of fabrication |
摘要 |
A three-dimensional, field-programmable, non-volatile memory includes multiple layers of first and second crossing conductors. Pillars are self-aligned at the intersection of adjacent first and second crossing conductors, and each pillar includes at least an anti-fuse layer. The pillars form memory cells with the adjacent conductors, and each memory cell includes first and second diode components separated by the anti-fuse layer. The diode components form a diode only after the anti-fuse layer is disrupted.
|
申请公布号 |
US6780683(B2) |
申请公布日期 |
2004.08.24 |
申请号 |
US20020313763 |
申请日期 |
2002.12.06 |
申请人 |
MATRIX SEMICONDUCTOR, INC. |
发明人 |
JOHNSON MARK G.;CLEEVES JAMES M.;KNALL JOHAN |
分类号 |
G11C17/16;(IPC1-7):H01L21/82 |
主分类号 |
G11C17/16 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|