发明名称 Semiconductor high dielectric constant decoupling capacitor structures and process for fabrication
摘要 Apparatus and method for providing high dielectric constant decoupling capacitors for semiconductor structures. The high dielectric constant decoupling capacitor can be fabricated by depositing high dielectric constant material between adjacent conductors on the same level, between conductors in successive levels, or both, to thereby provide very large capacitance value without any area or reliability penalty.
申请公布号 US6781185(B2) 申请公布日期 2004.08.24
申请号 US20020091193 申请日期 2002.03.05
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 CHEN HOWARD HAO;HSU LOUIS L.;WANG LI-KONG
分类号 H01L21/02;H01L23/522;H01L27/08;(IPC1-7):H01L27/108;H01L27/10 主分类号 H01L21/02
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