发明名称 |
Semiconductor high dielectric constant decoupling capacitor structures and process for fabrication |
摘要 |
Apparatus and method for providing high dielectric constant decoupling capacitors for semiconductor structures. The high dielectric constant decoupling capacitor can be fabricated by depositing high dielectric constant material between adjacent conductors on the same level, between conductors in successive levels, or both, to thereby provide very large capacitance value without any area or reliability penalty.
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申请公布号 |
US6781185(B2) |
申请公布日期 |
2004.08.24 |
申请号 |
US20020091193 |
申请日期 |
2002.03.05 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHEN HOWARD HAO;HSU LOUIS L.;WANG LI-KONG |
分类号 |
H01L21/02;H01L23/522;H01L27/08;(IPC1-7):H01L27/108;H01L27/10 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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