发明名称 |
Halftone phase shifting photomask and blanks for halftone phase shifting photomask therefor and a method for forming pattern by using the halftone phase shifting photomask |
摘要 |
In a halftone phase shifting photomask 108, having a pattern of halftone phase shifting film 102 containing at least chromium and fluorine, the halftone phase shifting film is heat-treated at a temperature between 250� C. and 500� C. so that a change of the optical property of the film produced by the application of excimer laser for exposure to the film is decreased. |
申请公布号 |
US6780547(B2) |
申请公布日期 |
2004.08.24 |
申请号 |
US20010825578 |
申请日期 |
2001.04.03 |
申请人 |
DAINIPPON PRINTING CO., LTD.;SEMICONDUCTOR LEADING EDGE TECHNOLOGIES, INC. |
发明人 |
MOTONAGA TOSHIAKI;ITO NORIHITO;HATSUTA CHIAKI;FUJIKAWA JUNJI;HAYASHI NAOYA;ONODERA TOSHIO;MATSUO TAKAHIRO;OGAWA TORU;NAKAZAWA KEISUKE |
分类号 |
G03F1/08;G03F1/00;G03F1/32;G03F1/68;H01L21/027;(IPC1-7):G03F9/00 |
主分类号 |
G03F1/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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