发明名称 |
Method of manufacturing semiconductor device with buried conductive lines |
摘要 |
A method of manufacturing semiconductor devices with buried conductive lines is disclosed. The method uses an ion implantation process to form buried conductive lines under isolation regions such as shallow trench isolations. The buried conductive lines connect neighboring active regions and replace conventional contacts and lead lines connecting the active regions.
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申请公布号 |
US6780737(B2) |
申请公布日期 |
2004.08.24 |
申请号 |
US20020322654 |
申请日期 |
2002.12.19 |
申请人 |
MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
CHEN CHAO-YANG |
分类号 |
B32B3/28;B32B3/30;H01L21/265;H01L21/425;H01L21/44;H01L21/74;H01L21/8242;H01L27/108;(IPC1-7):H01L21/425 |
主分类号 |
B32B3/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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