发明名称 |
Semiconductor device and method of manufacturing the same |
摘要 |
A semiconductor device having a barrier insulating film covering a copper wiring is formed by a plasma enhanced CVD method. The method includes supplying high frequency power of a frequency of 1 MHz or more to a first electrode, and holding a substrate on which copper wiring is formed on a second electrode facing the first electrode; supplying a film forming gas containing an alkyl compound and an oxygen-containing gas between the first and second electrodes while regulating gas pressure of the film forming gas to 1 Torr or less; and supplying high frequency power to either of the first and second electrodes to convert the film forming gas into a plasma, and allowing the alkyl compound and the oxygen-containing gas of the film forming gas to react to form a barrier insulating film covering the surface of the substrate.
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申请公布号 |
US6780790(B2) |
申请公布日期 |
2004.08.24 |
申请号 |
US20020287549 |
申请日期 |
2002.11.05 |
申请人 |
CANON SALES CO., INC.;SEMICONDUCTOR PROCESS LABORATORY CO., LTD. |
发明人 |
SHIOYA YOSHIMI;NISHIMOTO YUHKO;SUZUKI TOMOMI;MAEDA KAZUO |
分类号 |
C23C16/505;C23C16/30;C23C16/40;C23C16/44;C23C16/455;H01L21/205;H01L21/31;H01L21/316;H01L21/768;H01L23/522;(IPC1-7):H01L21/469;H01L21/30 |
主分类号 |
C23C16/505 |
代理机构 |
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代理人 |
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地址 |
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