Self-repairing built-in self test for linked list memories

摘要

One of a linked list memories is selected as a defect marking memory and faults in rows of the defect marking memory are detected. Row addresses having at least one fault in defect address registers are stored. Faults in rows of other linked list memories are detected, where the other linked list memories are the linked list memories other than the defect marking memory and a marking code is stored for each row address of the other linked list memories in the defect marking memory, where a particular marking code indicates whether a particular row address has at least one fault. The defect address registers and the defect marking memory are searched when addresses of the linked list memories are linked and row addresses indicated as having at least one fault are skipped in the linking process.