| 摘要 |
PURPOSE: A method for manufacturing an isolation layer of a semiconductor device is provided to prevent moat between active and isolation regions by forming a polysilicon layer between a pad nitride layer and a pad oxide layer and by annealing under H2 atmosphere. CONSTITUTION: A pad oxide layer(110), a polysilicon layer and a pad nitride layer are sequentially stacked on a substrate(100). The pad oxide layer is exposed by patterning the polysilicon layer and the pad nitride layer. Annealing is performed under H2 atmosphere. A trench is formed by etching the exposed pad oxide layer and the substrate. A gap-fill insulating layer(180) is filled in the trench. The polysilicon layer is exposed by planarizing. The exposed polysilicon ;layer is removed.
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