EXPOSURE APPARATUS AND METHOD CAPABLE OF PROVIDING HIGH PRECISION ALIGNMENT

摘要

PURPOSE: An exposure apparatus is provided to carry out high precision alignment at reasonable cost while using EUV(extreme ultraviolet) light as an exposure light source. CONSTITUTION: The first light with a wavelength not greater than 20 nanometers is used to project the pattern of a reticle onto an object(140) to be exposed. A projection optical system(130) projects the pattern onto the object to be exposed. A position detecting system receives the second light having a different wavelength than the first light through the projection optical system to detect the position information of a mark. The second light has a wavelength from 150 nanometers to 370 nanometers.