| 摘要 |
PURPOSE: A method for fabricating an electronic device with a line connection structure is provided to avoid a contact defect between a conductive layer and a line by forming the conductive layer closely attached to the sidewall of a concave part. CONSTITUTION: A line is formed on a substrate. The line is covered with an interlayer dielectric. A mask material with a pattern in which the upper part of the line is open is formed on the interlayer dielectric. The mask material is anisotropically etched by using an etch mask so that the interlayer dielectric is removed to form a concave part and the line is exposed. The mask material is eliminated. A conductive layer is formed on the resultant structure while the inside of the concave part is filled. The conductive layer formed on the upper surface of the interlayer dielectric is eliminated. The surface of the resultant structure is cleaned by using a cleaning solution having solubility with respect to the material of the line. When the mask layer is anisotropically etched, predetermined etching gas is used so that the sidewall of the concave part in the periphery of the upper surface of at least the interlayer dielectric is of a smooth type without minute roughness.
|
