| 摘要 |
PURPOSE: A BAW(Bulk Acoustic Wave) device and a fabricating method thereof are provided to simplify a fabrication process by forming an air gap in a process for removing a dielectric layer. CONSTITUTION: The first nitride semiconductor layer(11) is formed on the entire surface of a hetero-substrate(10). The first metal layer(12) is formed on a part of the first nitride semiconductor layer by depositing and patterning metal on the first nitride semiconductor layer. A dielectric layer is formed on a part of the first metal layer by depositing and patterning a dielectric on the first metal layer. The second metal layer(14) is formed on the dielectric layer and the first metal layer. The dielectric layer is partially exposed by patterning the second metal layer. The second nitride layer(15) is formed by growing a lateral part of the first nitride semiconductor layer. An air gap is formed by removing the dielectric layer. The second nitride semiconductor layer is coalesced by performing a lateral growth process. The third metal layer(16) is formed by depositing and patterning the metal on the second nitride semiconductor layer.
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