| 摘要 |
PURPOSE: A bonding wire for a semiconductor device is provided to enhance a fracture load characteristic, an apparent stiffness characteristic, and an electric conductivity characteristic by improving the structure of the bonding wire. CONSTITUTION: A matrix part is formed with copper having purity of 99.999 percent. A coating part is formed with one selected from a group including Pd, Pd-Ni alloy, Au, Ag, and Au-Ag alloy. The matrix part is covered by the coating part. The matrix part corresponds to 63 to 99.98 weight percent. The coating part corresponds to 0.02 to 37 weight percent. The matrix part includes Al -f 0.001 to 0.005 weight percent, Ag of 0.001 to 0.005 weight percent, Ca of 0.001 to 0.005 weight percent, and one selected from a group including B, Be, La, Ge, S, P, and Ba of 0.001 to 0.005 weight percent. |
