Integrated electronic circuit fabricating method, involves forming air-gap by retraction of part of silicon-di-oxide by keeping permeable material in contact with retraction agent of silicon-di-oxide

摘要

The method involves forming air-gap (C1) between interconnection units (11-13) above a portion regulated of a surface of a substrate (100) inside an interconnection layer that has a silicon-di-oxide (1) extending above an intermediary layer of a permeable material (2). The air-gap is formed by retraction of a part of the silicon-di-oxide by keeping the material in contact with a retraction agent of the silicon-di-oxide. An independent claim is also included for an integrated electronic circuit.