| 摘要 |
The thin-film transistors are connected to gate line (102) and data line made of composite material and molybdenum respectively, which are connected to respective gate and data pads. The shorting bars (128,152) of molybdenum and composite materials are connected to odd and even gate pads (108a,108b) and data pad, respectively. The test pads and connection lines connecting test pads to respective bars, are made of composite material. An independent claim is also included for array substrate manufacturing method. |
