发明名称 HEAT TREATMENT METHOD AND HEAT TREATMENT APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a heat treatment method wherein a substrate with a resist film formed thereon is so heat-treated as to realize a circuit pattern excellent in geometric accuracy, and to provide a heat treatment apparatus. SOLUTION: The heat treatment method comprises a step of placing a wafer W, with a film formed on its surface by resist liquid application, on a hot plate 33 housed in a heat treatment chamber 31; a step of controlling the vaporization rate of a specified substance in the film by changing the volume of the heating chamber 31 during the heating of the wafer W for the specified substance to have a distribution in the direction of the thickness of the film; and a step of transferring the wafer W from the hot plate 33 to a cooling plate 43 for cooling. COPYRIGHT: (C)2004,JPO&NCIPI
申请公布号 JP2004235469(A) 申请公布日期 2004.08.19
申请号 JP20030022589 申请日期 2003.01.30
申请人 TOKYO ELECTRON LTD 发明人 TERASHITA YUICHI;ARAMAKI HANAYO;SHIZUKUISHI MOMOKO;YOSHIHARA KOSUKE
分类号 B05D3/02;B05C9/14;B05C15/00;H01L21/027;(IPC1-7):H01L21/027 主分类号 B05D3/02
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