发明名称 |
Integrated electronic circuit having vertical FET devices in an array in a structure having deep channels |
摘要 |
<p>The integrated circuit has vertical FET transistors formed in deep channels [DT] as an array of devices. Also formed in the channels are diagonal capacitors. The structure has active semiconductor elements and a conducting strips [BS]. There are bit line contacts [CB] with inputs [E] and outputs [A].</p> |
申请公布号 |
DE10303963(A1) |
申请公布日期 |
2004.08.19 |
申请号 |
DE2003103963 |
申请日期 |
2003.01.31 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
KOWALSKI, BERNHARD;FELBER, ANDREAS;ROSSKOPF, VALENTIN;LINDOLF, JUERGEN;SCHLOESSER, TILL;GOEBEL, BERND |
分类号 |
G11C29/50;(IPC1-7):G11C29/00 |
主分类号 |
G11C29/50 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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