DIELECTRIC MEMORY AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To form a highly reliable memory cell contact and realize fining of a memory cell in a ferrodielectric memory using a hydrogen barrier. SOLUTION: The memory has a capacitive element (14) formed of a lower electrode (6), a capacitor insulating film (7) and an upper electrode (8) formed one by from below on a semiconductor substrate (13). At least an upper part of the capacitive element (14) is coated with a hydrogen barrier film (9). A memory cell contact (11) electrically connecting a wiring (12) which is an upper layer of the capacitive element (14) and a semiconductor substrate (13) or a conductive layer which is a lower layer of the capacitive element (14) is formed in contact with the hydrogen barrier film (9). Thereby, deterioration of characteristics of the dielectric memory is prevented by the hydrogen barrier film (9) and fining of a cell is realized. COPYRIGHT: (C)2004,JPO&NCIPI