| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor apparatus capable of accurately adjusting the diameter of a contact hole to a value different from the diameter of a mask opening, and forming a plurality of contact holes having different diameters on a semiconductor device by the same etching process. SOLUTION: This manufacturing method of a semiconductor apparatus comprises a step of forming an interlayer insulating film 4 on a semiconductor element 3, a step of forming a polysilicon layer 5 on the interlayer insulating film, a step of implanting an impurity element in a specified region 7 of the polysilicon layer 5, a step of forming a second resist layer 9 on the polysilicon layer 5, a step of forming openings 10 and 11 having a diameter of the same value on the second resist layer 9, a step of forming an opening 12 of the specified region 7 and an opening 13 of a region 8 other than the specified region by etching the polysilicon layer 5 by using the resist layer 9 as a mask, and a step of forming a contact hole 14 having a large diameter and a contact hole 15 having a small diameter on the interlayer insulating film 4 as using the polysilicon layer 5 and the second resist layer 9 as the mask. COPYRIGHT: (C)2004,JPO&NCIPI
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