发明名称 CLEANING LIQUID FOR SEMICONDUCTOR SUBSTRATE
摘要 PROBLEM TO BE SOLVED: To provide a cleaning liquid which is superior in removing a particle foreign matter and an ionic foreign matter on a semiconductor substrate, after a CMP (chemical mechanical polishing) process. SOLUTION: The cleaning liquid for the semiconductor substrate is characterised by containing at least one kind among nonionic surfactants shown by formula (1), CH<SB>3</SB>-(CH<SB>2</SB>)<SB>I</SB>-O-(C<SB>m</SB>H<SB>2m</SB>O)<SB>n</SB>-X and, by formula (2), CH<SB>3</SB>-(CH<SB>2</SB>)<SB>a</SB>-O-(C<SB>b</SB>H<SB>2b</SB>O)<SB>d</SB>-(C<SB>x</SB>H<SB>2x</SB>O)<SB>y</SB>-X, a chelating agent, and a chelate promoter. Each of I,m, and n in the formula independently represents a positive number, and X represents a hydrogen atom or a hydrocarbon group. Each of a,b,d,x, and y in the formula independently represents a positive number, and b and x are different from each other. COPYRIGHT: (C)2004,JPO&NCIPI
申请公布号 JP2004235619(A) 申请公布日期 2004.08.19
申请号 JP20030430664 申请日期 2003.12.25
申请人 SUMITOMO CHEM CO LTD;NEC ELECTRONICS CORP 发明人 TAKASHIMA MASAYUKI;KASAMA YOSHIKO;TOMIMORI HIROAKI;AOKI HIDEMITSU
分类号 C11D1/722;C11D3/04;C11D3/20;C11D3/28;C11D3/30;C11D3/33;C11D3/34;C11D3/36;H01L21/304;(IPC1-7):H01L21/304 主分类号 C11D1/722
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