发明名称 Methods for enhancing capacitors having roughened features to increase charge-storage capacity
摘要 Structures and methods for making a semiconductor structure are discussed. The semiconductor structure includes a rough surface having protrusions formed from an undoped silicon film. If the semiconductor structure is a capacitor, the protrusions help to increase the capacitance of the capacitor. The semiconductor structure also includes a relatively smooth surface abutting the rough surface, wherein the relatively smooth surface is formed from a polycrystalline material.
申请公布号 US2004161893(A1) 申请公布日期 2004.08.19
申请号 US20040781987 申请日期 2004.02.18
申请人 THAKUR RANDHIR P.S.;MERCALDI GARRY A.;NUTTALL MICHAEL;CHEN SHENLIN;PING ER-XUAN 发明人 THAKUR RANDHIR P.S.;MERCALDI GARRY A.;NUTTALL MICHAEL;CHEN SHENLIN;PING ER-XUAN
分类号 G11C11/404;G11C17/16;H01L21/02;H01L21/285;H01L21/768;H01L21/8242;H01L21/8246;H01L27/115;(IPC1-7):H01L21/824;H01L27/108 主分类号 G11C11/404
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