发明名称 |
Methods for enhancing capacitors having roughened features to increase charge-storage capacity |
摘要 |
Structures and methods for making a semiconductor structure are discussed. The semiconductor structure includes a rough surface having protrusions formed from an undoped silicon film. If the semiconductor structure is a capacitor, the protrusions help to increase the capacitance of the capacitor. The semiconductor structure also includes a relatively smooth surface abutting the rough surface, wherein the relatively smooth surface is formed from a polycrystalline material.
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申请公布号 |
US2004161893(A1) |
申请公布日期 |
2004.08.19 |
申请号 |
US20040781987 |
申请日期 |
2004.02.18 |
申请人 |
THAKUR RANDHIR P.S.;MERCALDI GARRY A.;NUTTALL MICHAEL;CHEN SHENLIN;PING ER-XUAN |
发明人 |
THAKUR RANDHIR P.S.;MERCALDI GARRY A.;NUTTALL MICHAEL;CHEN SHENLIN;PING ER-XUAN |
分类号 |
G11C11/404;G11C17/16;H01L21/02;H01L21/285;H01L21/768;H01L21/8242;H01L21/8246;H01L27/115;(IPC1-7):H01L21/824;H01L27/108 |
主分类号 |
G11C11/404 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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