发明名称 |
A process for preparation of an electrical contact region on an n-conductive AlGaInP-based layer by the steps useful in semiconductor technology |
摘要 |
<p>A process for preparation of an electrical contact region on an n-conductive AlGaInP-based layer by:application of an electrical contact material containng Au and at least one doping material, i.e. an element from the group Ge, Si, Sn, and Te, and of tempering the n-conductive AlGaInP-based layer. An independent claim is included for a structural element having an epitaxial semiconductor layer series with an electromagnetic radiation emitting active zone.</p> |
申请公布号 |
DE10308322(A1) |
申请公布日期 |
2004.08.19 |
申请号 |
DE2003108322 |
申请日期 |
2003.02.26 |
申请人 |
OSRAM OPTO SEMICONDUCTORS GMBH |
发明人 |
PLOESL, ANDREAS;ILLEK, STEFAN;STAUSS, PETER;WEGLEITER, WALTER;WIRTH, RALPH;STEIN, WILHELM;PIETZONKA, INES;DIEPOLD, GUDRUN |
分类号 |
H01L33/30;H01L33/40;(IPC1-7):H01L33/00;H01L21/283 |
主分类号 |
H01L33/30 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|