发明名称 OPTIMIZATION METHOD OF ILLUMINATION CONDITION OF LITHOGRAPHY PROJECTION SYSTEM USING FULL COMPUTER SIMULATION AND PROCESS WINDOW MATRIX, LITHOGRAPHY PROJECTION SYSTEM AND MACHINE INTERPRETATION-POSSIBLE MEDIUM ENCODED WITH INSTRUCTION WORD CAPABLE OF BEING RUN IN THE MACHINE
摘要 PURPOSE: Provided are a method for optimizing the illumination condition of a lithography projection system by using a full computer simulation and a process window matrix, a lithography projection system and a machine interpretation-possible medium encoded with an instruction word capable of being run in a machine for the optimization. CONSTITUTION: The method comprises the steps of restricting the lithography pattern to be printed on a substrate; selecting a simulation model; selecting the grid of source points in the pupil plane of the illuminator of a lithography projection system; calculating additional response value corresponding to the individual source point, wherein the each response value represents the result of single or a series of simulation using the simulation model; and adjusting the illumination arrange of the illuminator based on the analysis of the accumulated result of the additional calculated values. Preferably the response value is a focus exposure matrix and resulted in a process window comprising the information of dose latitude and depth of focus.
申请公布号 KR20040073364(A) 申请公布日期 2004.08.19
申请号 KR20040009136 申请日期 2004.02.11
申请人 ASML NETHERLANDS B.V. 发明人 HANSEN STEVEN GEORGE
分类号 G03F1/36;G03F7/20;H01L21/027 主分类号 G03F1/36
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