发明名称 |
OPTIMIZATION METHOD OF ILLUMINATION CONDITION OF LITHOGRAPHY PROJECTION SYSTEM USING FULL COMPUTER SIMULATION AND PROCESS WINDOW MATRIX, LITHOGRAPHY PROJECTION SYSTEM AND MACHINE INTERPRETATION-POSSIBLE MEDIUM ENCODED WITH INSTRUCTION WORD CAPABLE OF BEING RUN IN THE MACHINE |
摘要 |
PURPOSE: Provided are a method for optimizing the illumination condition of a lithography projection system by using a full computer simulation and a process window matrix, a lithography projection system and a machine interpretation-possible medium encoded with an instruction word capable of being run in a machine for the optimization. CONSTITUTION: The method comprises the steps of restricting the lithography pattern to be printed on a substrate; selecting a simulation model; selecting the grid of source points in the pupil plane of the illuminator of a lithography projection system; calculating additional response value corresponding to the individual source point, wherein the each response value represents the result of single or a series of simulation using the simulation model; and adjusting the illumination arrange of the illuminator based on the analysis of the accumulated result of the additional calculated values. Preferably the response value is a focus exposure matrix and resulted in a process window comprising the information of dose latitude and depth of focus. |
申请公布号 |
KR20040073364(A) |
申请公布日期 |
2004.08.19 |
申请号 |
KR20040009136 |
申请日期 |
2004.02.11 |
申请人 |
ASML NETHERLANDS B.V. |
发明人 |
HANSEN STEVEN GEORGE |
分类号 |
G03F1/36;G03F7/20;H01L21/027 |
主分类号 |
G03F1/36 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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